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An insulated gate bipolar transistor (IGBT) is a hybrid between a bipolar junction transistor (BJT) and a metal-oxide-semiconductor field-effect transistor (MOSFET). IGBT is ubiquitous and has helped bring comfort and quality of life to billions of people.   If IGBT were removed from current power electronics applications, many systems would stop working: Electronic ignition in gasoline powered cars, electric vehicles, electric mass transit systems, refrigerators, induction cookers, etc.  An IGBT model based on approximating the semiconductor physics PDEs developed for use in electro-thermal circuit simulations is presented followed by some methods, including the Generalized Falk method, to reduce the thermal components of IGBT devices to simple 1D circuits, which are easily implementable in circuit simulators.   The selection of the retained trial vectors is guided by the response participation factor, leading to a speed-up factor close to 20.  Numerical examples involving electric circuits with IGBTs are presented.